JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD
SOT-23 Plastic-Encapsulate Transistors
MMBT3906
TRANSISTOR (PNP)
SOT–23
FEATURES
z
As complementary type, the NPN transistor
MMBT3904 is Recommended
z
Epitaxial planar die construction
1. BASE
2. EMITTER
2A= Device code
Solid dot = Green molding compound device,
if none, the normal device.
X= Code
2AX
3. COLLECTOR
MAXIMUM RATINGS (TA=25℃ unless otherwise noted)
Parameter
Symbol
Value
Unit
VCBO
Collector-Base Voltage
-40
V
VCEO
Collector-Emitter Voltage
-40
V
VEBO
Emitter-Base Voltage
-5
V
IC
Collector Current -Continuous
-0.2
A
PC
Collector Dissipation
0.2
W
RθJA
TJ,Tstg
625
℃/W
Operation Junction and Storage Temperature Range
-55~+150
℃
Thermal resistance junction to ambient
ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)
Parameter
Symbol
Test
conditions
MIN
MAX
UNIT
Collector-base breakdown voltage
V(BR)CBO
IC=-10μA,
IE=0
-40
V
Collector-emitter breakdown voltage
V(BR)CEO
IC= -1mA,
IB=0
-40
V
Emitter-base breakdown voltage
V(BR)EBO
IE= -10μA, IC=0
-5
V
Collector cut-off current
ICBO
VCB= -40 V, IE=0
-100
nA
Collector cut-off current
ICEX
VCE=-30V, VBE(off)=-3V
-50
nA
-100
nA
Emitter cut-off current
DC current gain
IEBO
VEB= -5V, IC=0
hFE1
VCE=-1V, IC= -10mA
100
hFE2
VCE= -1V, IC=-50mA
60
hFE3
VCE= -2V, IC=-100mA
30
300
Collector-emitter saturation voltage
VCE(sat)1
IC=-50mA, IB=-5mA
-0.3
V
Base-emitter saturation voltage
VBE(sat)
IC= -50mA, IB=-5mA
-0.95
V
Transition frequency
fT
VCE=-20V,IC=-10mA,f=100MHz
Delay Time
td
Rise Time
tr
VCC=-3V,VBE=-0.5V
IC=-10mA, IB1=IB2=-1mA
Storage Time
ts
Fall Time
tf
300
VCC=-3V,IC=-10mA
IB1=IB2=-1mA
MHz
35
nS
35
nS
225
nS
75
nS
CLASSIFICATION OF hFE(1)
HFE
100-300
RANK
L
H
RANGE
100–200
200–300
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1
Rev. - 2.1
Typical Characteristics
Static Characteristic
200
DC CURRENT GAIN
COLLECTOR CURRENT
Ta=100℃
-350uA
-300uA
-250uA
-200uA
-40
IC
COMMON EMITTER
VCE=-1V
COMMON
EMITTER
Ta=25℃
-400uA
-60
——
hFE
-80
hFE
300
-500uA
-450uA
IC
(mA)
-100
-150uA
Ta=25℃
100
-100uA
-20
IB=-50uA
-0
-0
-4
-8
-12
-16
COLLECTOR-EMITTER VOLTAGE
VCEsat
-500
——
VCE
0
-0.1
-20
-1
-0.3
-10
-3
COLLECTOR CURRENT
(V)
IC
VBEsat
-1.2
-100
-30
IC
-200
(mA)
IC
——
BASE-EMITTER SATURATION
VOLTAGE VBEsat (V)
COLLECTOR-EMITTER SATURATION
VOLTAGE VCEsat (mV)
-300
Ta=100℃
-100
Ta=25℃
-30
Ta=25℃
-0.8
Ta=100℃
-0.4
β=10
β=10
-10
-0.0
-3
-1
-30
-10
COLLECTOR CURRENT
IC
-100
IC
-100
-200
-1
-10
-3
(mA)
-100
-30
COLLECTOR CURRENT
—— VBE
Cob/ Cib
9
——
IC
VCB/ VEB
(mA)
-10
f=1MHz
IE=0/IC=0
Ta=25℃
Cob
(pF)
Ta=100℃
Cib
C
CAPACITANCE
COLLECTOR CURRENT
IC
COMMON EMITTER
VCE=-1V
-30
-200
(mA)
-3
Ta=25℃
-1
3
-0.3
-0.1
-0.2
-0.4
-0.6
-0.8
-1.0
1
-0.1
-1.2
fT
600
—— IC
-1
-3
REVERSE VOLTAGE
V
-0.3
BASE-EMITTER VOLTAGE VBE (V)
PC
250
——
-10
-20
(V)
Ta
VCE=-20V
TRANSITION FREQUENCY
fT
COLLECTOR POWER DISSIPATION
PC (mW)
(MHz)
Ta=25℃
400
200
200
150
100
50
0
-1
-3
-10
COLLECTOR CURRENT
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-30
IC
0
-50
(mA)
25
50
75
AMBIENT TEMPERATURE
2
100
Ta
125
150
(℃ )
Rev. - 2.1
SOT-23 Package Outline Dimensions
Symbol
A
A1
A2
b
c
D
E
E1
e
e1
L
L1
θ
Dimensions In Millimeters
Min
Max
0.900
1.150
0.000
0.100
0.900
1.050
0.300
0.500
0.080
0.150
2.800
3.000
1.200
1.400
2.250
2.550
0.950 TYP
1.800
2.000
0.550 REF
0.300
0.500
0°
8°
Dimensions In Inches
Min
Max
0.035
0.045
0.000
0.004
0.035
0.041
0.012
0.020
0.003
0.006
0.110
0.118
0.047
0.055
0.089
0.100
0.037 TYP
0.071
0.079
0.022 REF
0.012
0.020
0°
8°
SOT-23 Suggested Pad Layout
NOTICE
JSCJ reserves the right to make modifications,enhancements,improvements,corrections or other
changes without further notice to any product herein. JSCJ does not assume any liability arising
out of the application or use of any product described herein.
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3
Rev. - 2.1
SOT-23 Tape and Reel
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4
Rev. - 2.1
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